Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per IR WORLD HEADQUARTERSKansas St., El Segundo, California, USA Tel: () TAC Fax: () Visit us at for sales contact IRFN Rev. C IRFNA, V, Ohm, N-Channel, Power MOSFET Packaging Symbol Features Ultra Low On-Resistance-r DS(ON) = Ω, V GS =V Simulation ModelsTemperature Compensated PSPICE™ and SABER © Electrical ModelsSpice and SABER © Thermal Impedance Peak Current vs